FDS8880 |
RFQ for FDS8880 Required Field |
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| Technical/Catalog Information | FDS8880 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 11.6A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 11.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1235pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDS8880 FDS8880 FDS8880TR ND FDS8880TRND FDS8880TR |
| Product | Manufacturers | Pack | D/C |
| FDS8880 | - | - | 2007 |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Typical Application |
Features |
| DC/DC converters | r DS(ON)= 10mΩ , VGS= 10V, ID = 11.6ArDS(ON)= 12mΩ , VGS = 4.5V, ID = 10.7AHigh performance trench technology for extremely low rDS(ON) Low gate chargeHigh power and current handling capability |
| Symbol | Parameter | Ratings | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ± 20 | V |
| ID | Drain Current Continuous (T = 25oC, V = 10V, R = 50/W) |
11.6 | A |
| Continuous (TA = 25oC, VGS = 4.5V, RJA = 50/W) | 10.7 | A | |
| Pulsed | Figure 4 | A | |
| EAS | Single Pulse Avalanche Energy (Note 1) |
82 | mJ |
| PD | Power dissipation | 2.5 | W |
| Derate above 25oC | 20 | mW/ | |
| TJ, TSTG | Operating and Storage Temperature | -55 to +150 |
